Renesas Launches 650V GaN FETs for High-Density Power Conversion
Renesas Revolutionizes Power with New 650V GaN FETs for AI Data Centers, E-mobility, and More
Renesas Electronics, a premier supplier of advanced semiconductor solutions, has unveiled three groundbreaking new high-voltage 650V GaN FETs, marking a significant leap forward in power conversion technology. These cutting-edge devices are specifically designed to meet the escalating demands of next-generation power systems, including AI data centers and server power supplies—especially those incorporating the new 800V HVDC architecture—as well as E-mobility charging infrastructure, UPS battery backup devices, battery energy storage systems, and solar inverters. Engineered for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices seamlessly combine the inherent high efficiency of GaN technology with a silicon-compatible gate drive input. This innovative approach substantially reduces switching power loss while maintaining the straightforward operating simplicity typically associated with silicon FETs, easing integration for designers.
The new TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was strategically acquired by Renesas in June 2024. Building on this low-loss d-mode technology, these devices offer superior efficiency compared to traditional silicon, silicon carbide (SiC), and even other GaN offerings on the market. Moreover, they are engineered to minimize power loss further through lower gate charge, reduced output capacitance, diminished crossover loss, and a minimized dynamic resistance impact. A critical advantage is their higher 4V threshold voltage, a characteristic not achievable with today’s enhancement mode (e-mode) GaN devices, contributing to enhanced noise immunity and easier gate drive control.
These Gen IV Plus products are built on a die that is 14 percent smaller than the previous Gen IV platform, yet they achieve an impressive lower RDS(on) of 30 milliohms, representing a 14 percent reduction in on-resistance. This leads to a remarkable 20 percent improvement in the on-resistance output-capacitance-product figure of merit (FOM), a key metric for power efficiency. The smaller die size not only reduces system costs but also lowers output capacitance, which directly translates to higher efficiency and increased power density. These combined advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency, and a small footprint are paramount. Critically, they are fully compatible with existing designs, allowing for easy upgrades and preserving valuable engineering investments.
To provide unparalleled flexibility for engineers, these new GaN FETs are available in compact TOLT, TO-247, and TOLL package options. This offers one of the broadest packaging selections in the industry, accommodating diverse thermal management strategies and layout optimizations for power systems ranging from 1kW to 10kW, and even higher with device paralleling. The new surface-mount packages include innovative bottom-side (TOLL) and top-side (TOLT) thermal conduction paths, which result in cooler case temperatures. This design facilitates easier device paralleling, enabling higher conduction currents when greater power is required. Furthermore, the commonly used TO-247 package provides customers with superior thermal capability, allowing them to achieve even higher power levels.
“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”
Unique D-Mode Normally-Off Design for Reliability and Easy Integration:
Like previous d-mode GaN products, the new Renesas devices utilize an integrated low-voltage silicon MOSFET. This unique configuration achieves seamless normally-off operation while fully capitalizing on the low-loss, high-efficiency switching benefits inherent to high-voltage GaN. Because they employ silicon FETs for the input stage, SuperGaN FETs are remarkably easy to drive with standard off-the-shelf gate drivers, eliminating the need for specialized drivers typically required for e-mode GaN. This inherent compatibility significantly simplifies design processes and lowers the barrier to GaN adoption for system developers, accelerating innovation.
GaN-based switching devices are rapidly emerging as key technologies for next-generation power semiconductors, fueled by surging demand from critical sectors such as electric vehicles (EVs), inverters, AI data center servers, renewable energy systems, and industrial power conversion. Compared to SiC and traditional silicon-based semiconductor switching devices, GaN solutions provide demonstrably superior efficiency, higher switching frequencies, and significantly smaller footprints, making them indispensable for modern, high-density power architectures.
Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs. This broad portfolio differentiates Renesas from many providers whose success in the field has been primarily limited to lower power devices, enabling Renesas to serve a wider range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing an impressive more than 300 billion hours of field usage, a testament to their reliability and widespread adoption.
Availability:
The TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS are available today. To facilitate immediate design and evaluation, Renesas also offers the 4.2kW Totem-pole PFC GaN Evaluation Platform (RTDTTP4200W066A-KIT).
BonChip Electronics: Your Premier Partner for Renesas GaN Solutions
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